Winbond SDRAM/DDR 系列产品特点：                                                                                                               

•高速度— 1600Mbps的DDR3能迎合需要高速效的数码电视、STB、蓝光播放机和网络设备；
•低功耗 —DDR3(1.5V) 的电压比DDR2(1.8V)低，能减低系统的耗电量；
•工作温度范围宽 - 最新的Q版本工作温度在-40 to +105；
•高品质 - 由于是国内生产与加工，无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中； 
•产线长 - Winbond已拥有全系列的DRAM产品。其中以TSOP-II和FBGA封装的128Mb~256Mb SDRAM、128Mb~512Mb DDR。

 

Winbond SDRAM系列规格参数
Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9816G6IB	16M	1Mx16	-6	166 MHz	3.3V±0.3V	Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant
			-7	143 MHz	2.7V~3.6V
W9816G6IH	16M	1Mx16	-5	143 MHz	3.3V±0.3V	Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant
				200 MHz
			-6/-6I/-6A	166 MHz	3.3V±0.3V
			-7/-7I	143 MHz	2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9864G2IH	64M	2Mx32	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-7	143 MHz	2.7V~3.6V
W9864G6IH	64M	4Mx16	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-7/-7S	143 MHz	2.7V~3.6V
W9864G6JH	64M	4Mx16	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6I	166 MHz
			-7/-7S	143 MHz	2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9812G2IH	128M	4Mx32	-6C	166 MHz	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
			-6/-6I/-6A		2.7V~3.6V
			-75	133 MHz
W9812G2IB	128M	4Mx32	-6/-6I/-6A	166 MHz	2.7V~3.6V	Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant
			-75	133 MHz
W9812G6IH	128M	8Mx16	-5	200 MHz	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6C/-6I/-6A	166 MHz
			-75	133 MHz
W9812G6JH	128M	8Mx16	-5	200 MHz	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free with RoHS compliant
			-6/-6I	166 MHz
			-75	133 MHz
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9825G2DB	256M	8Mx32	-6	166 MHz	3.3V±0.3V	TFBGA 90 ball using Pb free with RoHS compliant
			-6I		2.7V~3.6V
			-75/75I	133 MHz
W9825G6EH	256M	16Mx16	-5	200MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-6	133 MHz
			-75/75I/75A
W9825G6JH	256M	16Mx16	-5	200MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
			-6/-6I	166 MHz
			-6	133 MHz
			-75
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Winbond DDR/DDR1系列规格参数
Part No.	Density	Organization		Speed Grade
W9464G6IH	64Mb DDR	4Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
W9464G6JH	64Mb DDR	4Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5	200 MHz	CL3
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
Part No.	Density	Organization		Speed Grade
W9412G6IH	128Mb DDR	8Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
W9412G6JH	128Mb DDR	8Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5	200 MHz	CL3
W9412G2IB	128Mb DDR	4Mx32	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.
Part No.	Density	Organization		Speed Grade
W9712G6JB	256Mb DDR	8Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9712G8JB	256Mb DDR	16Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization		Speed Grade
W9712G6JB	128Mb DDR2	8Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9712G8JB	128Mb DDR2	16Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W9725G6JB	256Mb DDR2	16Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9725G8JB	256Mb DDR2	32Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W9751G6JB	512Mb DDR2	32Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9751G8JB	512Mb DDR2	64Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W971GG6JB	1G DDR2	64Mx16	8 Banks	-18	DDR2-1066	2006/6/6
				-25/25I	DDR2-800	2005/5/5
				-3	DDR2-667	2005/5/5
W971GG8JB	1G DDR2	128Mx8	8 Banks	-18	DDR2-1066	2006/6/6
				-25/25I	DDR2-800	2005/5/5
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W972GG6JB	2G DDR2	128Mx16	8 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W972GG8JB	2G DDR2	256Mx8	8 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.